2016年第63回応用物理学会春季学術講演会

講演情報

一般セッション(口頭講演)

10 スピントロニクス・マグネティクス » 10.2 スピントルク・スピン流・回路・測定技術

[21p-W241-1~21] 10.2 スピントルク・スピン流・回路・測定技術

2016年3月21日(月) 13:15 〜 19:00 W241 (西2・3号館)

齋藤 秀和(産総研)、工藤 究(東芝)

16:00 〜 16:15

[21p-W241-11] Quantitative analysis of the nuclear spin dynamics in GaAs with irradiation by RF magnetic field

〇(D)Eldesouky Mahmoud Rasly1、Lin Zhichao1、Yamamoto Masafumi1、Uemura Tetsuya1 (1.Hokkaido Univ.)

キーワード:dynamic nuclear polarization,spin temperature,Overhauser field

Nuclear spin (NS) system is a key technology for implementing quantum bits in solid-state quantum information memories. We observed interesting behaviors for NS dynamics throughout the oblique Hanle effect measurement, using a spin injection device with Co2MnSi/CoFe/n-GaAs Schottky tunnel junction, with and without irradiation by rf magnetic field (RF). Furthermore, we simulated the transient response of the nuclear spins by incorporating the concept of the time dependence of the nuclear spin temperature for the case without RF. The subject of this attempt is to quantitatively analyze the transient response of NSs with RF. These analyses lay the fundamental basis of the nuclear spin dynamics for the quantum information applications.