〇Takayasu Oka¹, Mizue Ishikawa², Yuichi Fujita¹, Shinya Yamada¹, Takeshi Kanashima¹, Yoshiaki Saito², Kohei Hamaya¹ (1.Osaka Univ., 2.RDC, Toshiba)

〇Ajay Tiwari¹, Tomoaki Inokuchi¹, Mizue Ishikawa¹, Hideyuki Sugiyama¹, Yoshiaki Saito¹ (1.Toshiba Corporation)

〇Naoto Yamashita¹, Yuichiro Ando¹, Hayato Koike², Tomoyuki Sasaki², Shinji Miwa³, Kazuhito Tanaka³, Yoshishige Suzuki³, Masashi Shiraishi¹ (1.Kyoto Univ., 2.TDK Corp., 3.Osaka Univ.)

〇Takeo Koike¹, Mikihiko Oogane¹, Astuo Ono¹, Tetsurou Takada², Hidekazu Saito², Yasuo Ando¹ (1.Tohoku Univ., 2.AIST)

〇Kenro Ohtomo¹, Yuichiro Ando¹, Teruya Shinjo¹, Tetsuya Uemura², Masashi Shiraishi¹ (1.Kyoto Univ., 2.Hokkaido Univ.)

〇Daiki Kitagata¹, Taiju Akushichi¹, Yota Takamura², Yusuke Shuto¹, Satoshi Sugahara¹ (1.ISEL, Tokyo Tech, 2.Dept. of Physical Electronics, Tokyo Tech)

〇(D)Taiju Akushichi¹, Yota Takamura², Yusuke Shuto¹, Satoshi Sugahara¹ (1.ISEL, Tokyo Tech, 2.Dept. of Physical Electron., Tokyo Tech)

〇Rento Ohsugi¹, Mano Yuuko¹, Kohda Makoto¹, Nitta Junsaku¹ (1.Tohoku univ.)

〇Masayuki Matsushima¹, Sergey Dushenko^1,2, Ryo Ohshima^1,2, Yuichiro Ando¹, Teruya Shinjo¹, Masashi Shiraishi¹ (1.Kyoto Univ., 2.Osaka Univ.)

〇Ryohei Kumamoto¹, Yuichiro Ando¹, Sergey Dushenko^1,2, Teruya Shinjo¹, Masashi Shiraishi¹ (1.Kyoto Univ., 2.Osaka Univ.)

〇(D)Mahmoud Rasly Eldesouky¹, Zhichao Lin¹, Masafumi Yamamoto¹, Tetsuya Uemura¹ (1.Hokkaido Univ.)

〇Akiyori Yamamoto¹, Tomonari Yamaguchi², Ryo Ishikawa², Ryota Akiyama¹, Yuki K. Wakabayashi¹, Shinji Kuroda², Shinobu Ohya¹, Masaaki Tanaka¹ (1.The Univ. of Tokyo, 2.Univ. of Tsukuba)

Shunsuke Daimon¹, Ryo Iguchi¹, Eiji Saitoh^1,2,3,4, 〇Kenichi Uchida^1,5 (1.IMR Tohoku Univ., 2.WPI-AIMR Tohoku Univ., 3.JST ERATO-SQR, 4.ASRC JAEA, 5.JST PRESTO)

〇Masaki Ota¹, Shinya Kasai², Seiji Mitani², Kenji Kasahara¹, Takashi Manago¹ (1.Fukuoka Univ., 2.NIMS)

〇Rie Matsumoto¹, Hiroko Arai^2,1, Shinji Yuasa¹, Hiroshi Imamura¹ (1.AIST, 2.PRESTO, JST)

〇(P)ryo hiramatsu¹, hitoshi kubota¹, sumito tsunegi¹, shingo tamaru¹, kay yakushiji¹, akio fukushima¹, rie matsumoto¹, hiroshi imamura¹, shinji yuasa¹ (1.AIST)

〇Sumito Tsunegi¹, Hitoshi Kubota¹, Kay Yakushiji¹, Akio Fukushima¹, Shinji Yuasa¹ (1.AIST)

〇Hossein SepehriAmin¹, S. Bosu¹, Y. Sakuraba¹, M. Hayashi¹, T. Schrefl², C. Abert³, D. Suess³, K. Hono¹ (1.NIMS, Tsukuba, Japan, 2.Danube University Krems, Austria, 3.Technical University of Vienna, Austria)

〇(PC)Subrojati Bosu¹, Hossein Sepehri-Amin¹, Yuya Sakuraba¹, Shinya Kasai¹, Masamitsu Hayashi¹, Kazuhiro Hono¹ (1.National Institute for Materials Science, Tsukuba, Japan)

〇(DC)Tatsuya Yamamoto¹, Takeshi Seki^1,2, Koki Takanashi¹ (1.IMR, Tohoku Univ., 2.JST-PRESTO)

〇Hirofumi Suto¹, Kiwamu Kudo¹, Tazumi Nagasawa¹, Taro Kanao¹, Koichi Mizushima¹, Rie Sato¹ (1.Corporate R&D Center, Toshiba)