[21p-W241-1~21] 10.2 Spin torque, spin current, circuits, and measurement technologies

▲ [21p-W241-2] Effect of post annealing on spin accumulation and transport signals in Co₂FeSi/MgO/n⁺-Si on insulator devices

〇Ajay Tiwari¹, Tomoaki Inokuchi¹, Mizue Ishikawa¹, Hideyuki Sugiyama¹, Yoshiaki Saito¹ (1.Toshiba Corporation)

Keywords:Semiconductor spintronics,Spin injection,Spin accumulation

The post annealing temperature dependence of spin accumulation and transport signals in Co₂FeSi/MgO/n⁺-Si on insulator were investigated. The spin signals were detected using 3-terminal Hanle, 2-terminal local and 4-terminal nonlocal measurements. The all spin signals slightly increase with increasing annealing temperature with a peak at around 350°C and then start slightly decreasing. The improvement in the spin signal is probably due to high polarization of Co₂FeSi as a result of structural ordering. The spin signal does not vary significantly by annealing, indicating the robustness of our device. This result would be useful for future spintronics devices.