[21p-W241-1~21] 10.2 Spin torque, spin current, circuits, and measurement technologies

▲ [21p-W241-4] Electrical Spin Injection into δ-doped n-type Germanium Using Co₂Fe_0.4Mn_0.6Si Heusler Alloy Film

〇Takeo Koike¹, Mikihiko Oogane¹, Astuo Ono¹, Tetsurou Takada², Hidekazu Saito², Yasuo Ando¹ (1.Tohoku Univ., 2.AIST)

Keywords:Spin injection into semiconductor

Spin injection into semiconductor has been demonstrated by some groups using non-local and/or local Hanle measurements. However, observed spin signal was small because of low spin injection efficiency from ferromagnetic materials to semiconductor. In order to enhance spin signal drastically, Co-based Heusler alloys are promising materials as a spin injector because of its high spin polarization. In addition, due to the inversion symmetric crystal and high carrier mobility, germanium is also an attractive material for semiconductor-spintronics. In this work, we have observed spin accumulation signal in δ-doped n-type Ge, and systematically investigated bias current dependence of 3-terminal Hanle effect signals.