[21p-W241-1~21] 10.2 スピントルク・スピン流・回路・測定技術

▲ [21p-W241-4] Electrical Spin Injection into δ-doped n-type Germanium Using Co₂Fe_0.4Mn_0.6Si Heusler Alloy Film

〇小池 剛央¹、大兼 幹彦¹、小野 敦央¹、高田 哲朗²、齋藤 秀和²、安藤 康夫¹ (1.東北大院工、2.産総研)

キーワード：Spin injection into semiconductor

Spin injection into semiconductor has been demonstrated by some groups using non-local and/or local Hanle measurements. However, observed spin signal was small because of low spin injection efficiency from ferromagnetic materials to semiconductor. In order to enhance spin signal drastically, Co-based Heusler alloys are promising materials as a spin injector because of its high spin polarization. In addition, due to the inversion symmetric crystal and high carrier mobility, germanium is also an attractive material for semiconductor-spintronics. In this work, we have observed spin accumulation signal in δ-doped n-type Ge, and systematically investigated bias current dependence of 3-terminal Hanle effect signals.