[21p-W241-1~21] 10.2 Spin torque, spin current, circuits, and measurement technologies

▲ [21p-W241-6] Design and analysis of electric-field-assisted four-terminal nonlocal Si-channel MOS devices

〇Daiki Kitagata¹, Taiju Akushichi¹, Yota Takamura², Yusuke Shuto¹, Satoshi Sugahara¹ (1.ISEL, Tokyo Tech, 2.Dept. of Physical Electronics, Tokyo Tech)

Keywords:Silicon,spin lifetime