[21p-W521-1~18] 12.4 Organic light-emitting devices and organic transistors

△ [21p-W521-6] Fabrication of a-(BEDT-TTF)₂I₃ FET by Lamination Contact Electrode

〇Taiga Goto¹, Yusaku Tada², Masatoshi Sakai², Yugo Okada^2,3, Hiroshi Yamauchi¹, Kazuhiro Kudo² (1.Chiba Univ., 2.graduate school, 3.Center for Frontier Science)

Keywords:organic semiconductor

Recently, phase transition FET have been studied using strongly correlated organic materials.
Fine and thin single crystals of organic materials are necessary to measure the effect of the electronic field on change order state.
We have developed lamination contact electrode to make electrical contact on to the tiny organic single crystal.
We will talk about the effect of gate electrical field on four-terminal resistivity at around the metal - insulator transition temperature of a-(BEDT-TTF)₂I_3.