[21p-W541-1~12] 13.8 Compound and power electron devices and process technology

[21p-W541-2] TEM observation of interface between sputter-deposited Al-based insulator and AlGaN

〇Mikito Nozaki¹, Ryohei Asahara¹, Joyo Ito¹, Kenta Watanabe¹, Takahiro Yamada¹, Satoshi Nakazawa², Yoshiharu Anda², Masahiro Ishida², Tetsuzo Ueda², Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Panasonic)

Keywords:gallium nitride,TEM