The 63rd JSAP Spring Meeting, 2016

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13 Semiconductors » 13.8 Compound and power electron devices and process technology

[21p-W541-1~12] 13.8 Compound and power electron devices and process technology

Mon. Mar 21, 2016 1:45 PM - 5:00 PM W541 (W5)

Kenji Shiojima(Univ. of Fukui), Kozo Makiyama(Fujitsu Lab.)

2:30 PM - 2:45 PM

△ [21p-W541-4] Substrate bias effects on normally-off P-channel AlGaN/GaN MOS-HFET

〇Shunsuke Kubota1, Akira Nakajima2, Shin-ichi Nishizawa2, Hiromichi Ohashi1, Kuniyuki Kakushima1, Hitoshi Wakabayashi1, Kazuo Tsutsui1 (1.Tokyo Tech. IGSSE, 2.AIST)

Keywords:nitride semiconductor,P-channel,normally-off