[21p-W541-1~12] 13.8 Compound and power electron devices and process technology

[21p-W541-9] Improvement of heat dissipation in a transferred AlGaN/GaN HEMT by using a copper plate with smooth surface

〇Masanobu Hiroki¹, Kazuhide Kumakura¹, Hideki Yamamoto¹ (1.NTT BRL)

Keywords:AlGaN/GaN,HEMT,epitaxial lift-off

We found the increase in the heat dissipation of AlGaN/GaN HEMT by transfer to copper plate using h-BN epitaxial lift-off technique. In this report, we present that thermal resistance of the HEMT reduced by 25% by using copper plate wtih flat surface. It is probably caused by the improvement of adhesion between GaN layer and a copper plate.