The 63rd JSAP Spring Meeting, 2016

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13 Semiconductors » 13.8 Compound and power electron devices and process technology

[21p-W541-1~12] 13.8 Compound and power electron devices and process technology

Mon. Mar 21, 2016 1:45 PM - 5:00 PM W541 (W5)

Kenji Shiojima(Univ. of Fukui), Kozo Makiyama(Fujitsu Lab.)

3:45 PM - 4:00 PM

[21p-W541-8] Normally-off ion-implanted MISFET fabricated on free-standing GaN substrates

〇Kota Sugamata1, Naoki Kaneda2, Tomoyoshi Mishima1, Tohru Nakamura1 (1.Hosei Univ., 2.Quantum Spread)

Keywords:free-standing GaN substrates,MISFET