2016年第63回応用物理学会春季学術講演会

講演情報

一般セッション(口頭講演)

8 プラズマエレクトロニクス » 8.8 Plasma Electronics English Session

[21p-W611-1~7] 8.8 Plasma Electronics English Session

2016年3月21日(月) 15:30 〜 17:15 W611 (西6号館)

須田 善行(東大)

15:45 〜 16:00

[21p-W611-2] Copper induced hollow carbon nanospheres by arc discharge method: controlled synthesis and formation mechanism

〇(D)Rui Hu1,2、Xiangke Wang2、Masaaki Nagatsu1 (1.Shizuoka Univ.、2.CAS)

キーワード:arc discharge,hollow carbon nanospheres

Hollow carbon nanospheres with controlled morphologies were successfully synthesized via copper-carbon direct current arc discharge method by alternating the concentration of methane in the reactant gas mixture. A self-healing process to keep the structural integrity of encapsulated shells was evolved gradually with the adding of methane gas from 0% to 20%. The outer graphitic layers expanded and grew to be large fluffy nanospheres further with high methane concentrations from 30% to 50%. A self-repairing function by the reattachment of broken graphitic layers initiated from near-electrode space to the distant was also distinctly exhibited. By comparing several comparable metals (e.g., copper, silver, gold)-carbon arc discharge products, a catalytic carbon-encapsulation mechanism combined with a core-escaping process has been proposed. Specifically, on the basis of the experimental results, copper could be applied as a unique model for both the catalysis of graphitic encapsulation and the adequate template for the formation of hollow nanostructure.