[21p-W641-1~19] 6.1 Ferroelectric thin films

△ [21p-W641-9] Domain Inversion in Ferroelectric Y:HfO₂ Thin Film by Using SNDM

〇Zhou Chen¹, Yoshiomi Hiranaga¹, Takao Shimizu², Kiriha Katayama², Takanori Mimura², Hiroshi Funakubo², Yasuo Cho¹ (1.RIEC. Tohoku Univ., 2.Tokyo Tech)

Keywords:ferroelectrics,scanning nonlinear dielectric microscopy,hafnium oxide thin film

Now the ferroelectricity in hafnium oxide has been attracted worldwide attention. In this research, we used scanning nonlinear dielectric microscopy (SNDM) to observe Y:HfO₂ thin film and invert its domain. And we also used SNDM to write nanoscale dots on Y:HfO₂ thin film in order to discuss the capability of Y:HfO₂ thin film as recording media in ferroelectric data storage.