The 63rd JSAP Spring Meeting, 2016

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[22a-H121-1~11] 15.4 III-V-group nitride crystals

Tue. Mar 22, 2016 8:45 AM - 11:45 AM H121 (H)

Tetsuya Akasaka(NTT), Yoshiki Saito(TOYODA GOSEI Co., Ltd)

11:30 AM - 11:45 AM

△ [22a-H121-11] Study of a-plane GaInN quantum well structure growth on r-plane sapphire

〇Teruyuki Niimi1, daiki Jinno1, motoaki Iwaya1, tetsuya Takeuchi1, satoshi Kamiyama1, isamu Akasaki1,2 (1.Faculty of Science and Technology, Meijo Univ., 2.Akasaki Research Center, Nagoya Univ.)

Keywords:a-plane GaInN