Control of lattice relaxation position in AlGaN heterostructures for strong emissions

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Tue. Mar 22, 2016 8:45 AM - 11:45 AM H121 (H)

Tetsuya Akasaka(NTT), Yoshiki Saito(TOYODA GOSEI Co., Ltd)

9:00 AM - 9:15 AM

〇(DC)Shuhei Ichikawa¹, Kyosuke Kumamoto¹, Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ.)

Keywords:AlGaN,lattice relaxation,misfit dislocation