The 63rd JSAP Spring Meeting, 2016

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[22a-H121-1~11] 15.4 III-V-group nitride crystals

Tue. Mar 22, 2016 8:45 AM - 11:45 AM H121 (H)

Tetsuya Akasaka(NTT), Yoshiki Saito(TOYODA GOSEI Co., Ltd)

9:30 AM - 9:45 AM

[22a-H121-4] Atomic-steps formation of c-plane sapphire by air annealing for AlN growth

〇Shinya Tamaki1, Shuhei Suzuki1, Hideto Miyake1,2, Kazumasa Hiramatsu1 (1.Mie Univ., 2.Mie Univ. Inov.)

Keywords:AlN,Sapphire substrate