[22a-P4-1~27] 6.3 Oxide electronics

[22a-P4-9] Electrical and Structural Properties of Pt/TiO_2-d/Pt Thin Film Prepared by Sputtering Using Oxygen Radical

Makoto Takanyanagi¹, Kinya Kawamura¹, Takashi Tsuchiya¹, Kazuya Terabe², 〇Tohru Higuchi¹ (1.Tokyo Univ. Sci., 2.NIMS)

Keywords:oxide semiconductor TiO2-d,Redox,memory device

In this study, we have prepared the TiO2-d thin film by RF magnetron sputtering using oxygen radical and characterized its structural and electrical propeties. Furthermore, we have chacterized about the memory devices of Pt/TiO2-d/Pt structure.