[22a-P4-1~27] 6.3 Oxide electronics

[22a-P4-10] Metal-insulator Transition of Valence-controlled VO₂ Thin Film

Tomohiro Tannno¹, Takaaki Suetsugu¹, Takashi Tsuchiya¹, Masaki Kobaayshi², 〇Tohru Higuchi¹, Hiroshi Kumigashira² (1.Tokyo Univ. Sci., 2.PF, KEK)

Keywords:VO2,metal-insulator transition

We have prepared the VO₂ thin films on MgO and Al2O3 substrates by RF magnetron sputtering and characterized their structural and electrical properties. The metal-insulator transition temperature and electrical resistivity strongly depend on lattice distortion and valence state. Furthermore, the changes of bandwidth and electron correlation energy were also observed by soft-X-ray spectroscopy.