[22a-P5-1~18] 6.4 Thin films and New materials

[22a-P5-15] Low-Temperature Fabrication of Silicon Dioxide Thin Films by Mist-CVD Method

〇Shigetaka Katori¹, Kouki Hiramatsu¹, Masanori Nagahata¹, Masaya Oda², Toshimi Hitora² (1.NIT, Tsuyama Coll., 2.Flosfia Inc.)

Keywords:Silicon Dioxide,Mist-CVD,Low temperature fabrication

We discuss the formation of the silicon dioxide thin film by a mist CVD method. Polysilazane and hydrogen peroxide were used as an source material and oxidizing agent, followed by deposition. Refractive index and thickness were analyzed by spectroscopic ellipsometry.
The refractive index and the thickness of the resulting thin film was 1.45 and 64nm. Moreover, as a result of measuring the electric characteristics, the breakdown voltage is 18.47 [MV / cm], it became clear that the high insulation property was obtained.