[22a-P6-1~19] 15.4 III-V-group nitride crystals

[22a-P6-8] A Study of selective area growth of GaN for applying to
three-dimensional channel transistors

〇Hiroki Kuroiwa¹, Yusuke Takei¹, Tokio Takahashi², Toshihide Ide², Mitsuaki Shimizu², Kazuo Tsutsui¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai¹ (1.Tokyo Tech., 2.AIST Advanced Power Electronics Research Center)

Keywords:GaN,selective area growth