Hiroki Kuroiwa

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Speaker, Author, Co-Author

Tue. Mar 22, 2016 9:30 AM - 11:30 AM P6 (Gymnasium)

Poster presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[22a-P6-1~19] 15.4 III-V-group nitride crystals

9:30 AM - 11:30 AM

[22a-P6-8] A Study of selective area growth of GaN for applying to
three-dimensional channel transistors

〇Hiroki Kuroiwa¹, Yusuke Takei¹, Tokio Takahashi², Toshihide Ide², Mitsuaki Shimizu², Kazuo Tsutsui¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai¹ (1.Tokyo Tech., 2.AIST Advanced Power Electronics Research Center)