[22a-W541-1~10] 13.8 Compound and power electron devices and process technology

△ [22a-W541-9] Suppression of isolation leakage current in AlGaN/GaN HEMTs by neutral-beam etching

〇Fuyumi Hemmi¹, Cedric Thomas², Yi-Chun Lai³, Akio Higo³, Alex Guo⁴, Shireen Warnock⁴, Jesus A. del Alamo⁴, Seiji Samukawa^2,3, Taiichi Otsuji¹, Tetsuya Suemitsu¹ (1.RIEC Tohoku Univ., 2.IFS Tohoku Univ., 3.AIMR Tohoku Univ., 4.MTL MIT)

Keywords:neutral beam etching,plasma damage