[22p-H103-1~8] 6.4 Thin films and New materials

[22p-H103-1] Perfect Separation between Hybrid Orientation CeO₂ Regions on SOI Substrates

〇Tomoyasu Inoue¹, Shida Shigenari¹ (1.Iwaki Meisei Univ.)

Keywords:orientation selective epitaxy,hybrid orientation substrates,dielectric thin films

The hybrid orientation structure of the CeO₂(100) and (110) regions on Si(100) substrates is studied using electron beam induced orientation selective epitaxial (OSE) growth by reactive magnetron sputtering. Two separate regions of growth are seen, with CeO₂(100) layers found to grow in regions irradiated by electrons during the growth process, and the CeO₂(110) layers growing in the regions not irradiated by the beam. The lateral orientation mapping reveals the existence of transition regions between these two orientation regions. To make a breakthrough in reduction of the transition region width, we employ the OSE growth on SOI substrates with lithographically formed trenches, which results in perfect separation of the two regions by optimizing the geometry of the trenches.