[22p-H121-1~7] 15.4 III-V-group nitride crystals

△ [22p-H121-2] Analysis of the growth mechanism of semi-polar (10-11) plane GaInN on freestanding (10-11) GaN substrate

〇Toru Takanishi¹, Junya Ohsumi¹, Motoaki Iwaya¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Isamu Akasaki^1,2 (1.Fac.Sci.&Eng.,Meijo Univ., 2.Akasaki Research Center,Nagoya Univ.)

Keywords:GaInN