The 63rd JSAP Spring Meeting, 2016

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[22p-H121-1~7] 15.4 III-V-group nitride crystals

Tue. Mar 22, 2016 1:15 PM - 3:00 PM H121 (H)

Masatomo Sumiya(NIMS)

2:00 PM - 2:15 PM

[22p-H121-4] InGaN/GaN MQW Grown at 500 Torr on 200 mm Si Wafer by Fast Rotating Single-Wafer MOCVD

〇Yasushi Iyechika1, Yoshitaka Ishikawa1, Yuusuke Sato1, Hideshi Takahashi1 (1.NuFlare Technology)

Keywords:InGaN/GaN MQW,growth pressure,wavelength uniformity