[22p-H121-1~7] 15.4 III-V-group nitride crystals

△ [22p-H121-7] Fabrication a low-temperature grown p-side structure with GaInN tunnel junction and n-GaNSb

〇(M1)Kenta Suzuki¹, Kaku Takarabe¹, Daiki Komori¹, Daiki Takasuka¹, Norikatsu Koide¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Satoshi Kamiyama¹, Isamu akasaki^1,2 (1.Fac. Sci.&Eng., Meijo Univ., 2.Akasaki Research Center, Nagoya Univ.)

Keywords:semiconductor,nitride