Tomohiro Yoshida

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Speaker, Author, Co-Author

Thu. Sep 7, 2017 1:30 PM - 5:15 PM S22 (Palace B)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[7p-S22-1~14] 13.8 Compound and power electron devices and process technology

4:00 PM - 4:15 PM

△ [7p-S22-10] Device performances of InAlN MIS-HEMTs fabricated on Si substrates

〇Tomohiro Yoshida¹, Yoshimi Yamashita², Isao Makabe¹, Issei Watanabe², Akifumi Kasamatsu², Ken Nakata¹, Kazutaka Inoue¹ (1.Sumitomo Electric Ind., 2.NICT)

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