Hidetoshi Nakahata

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Speaker, Author, Co-Author

Thu. Sep 7, 2017 1:45 PM - 6:00 PM C17 (Training Room 2)

Oral presentation
| 21 Joint Session K
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[7p-C17-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

5:30 PM - 5:45 PM

[7p-C17-15] Temperature Dependence of In₂O₃ Growth by Halide Vapor Phase Epitaxy

〇Hidetoshi Nakahata¹, Takayuki Suga¹, Keita Konishi¹, Rie Togashi^1,2, Hisashi Murakami^1,2, Plamen Paskov³, Bo Monemar^2,3, Yoshinao Kumagai^1,2 (1.TUAT, 2.TUAT GIR, 3.Linkoping Univ.)