[7p-C17-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[7p-C17-15] Temperature Dependence of In₂O₃ Growth by Halide Vapor Phase Epitaxy

〇Hidetoshi Nakahata¹, Takayuki Suga¹, Keita Konishi¹, Rie Togashi^1,2, Hisashi Murakami^1,2, Plamen Paskov³, Bo Monemar^2,3, Yoshinao Kumagai^1,2 (1.TUAT, 2.TUAT GIR, 3.Linkoping Univ.)

Keywords:Halide Vapore Phase Epitaxy, In2O3, Stable Phase