Nobukazu Kise

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Speaker, Author, Co-Author

Fri. Sep 8, 2017 9:00 AM - 11:30 AM S22 (Palace B)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[8a-S22-1~9] 13.8 Compound and power electron devices and process technology

9:00 AM - 9:15 AM

[8a-S22-1] GaAsSb/InGaAs Double-Gate Tunnel FET with a Subthreshold Swing of 68mV/dec.

〇Nobukazu Kise¹, Shinjiro Iwata¹, Ryosuke Aonuma¹, Yasuyuki Miyamoto¹ (1.Tokyo Tech.)