Shinya Takashima

→ Search for Shinya Takashima in Google Scholar

Speaker, Author, Co-Author

Thu. Sep 7, 2017 1:30 PM - 5:15 PM S22 (Palace B)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[7p-S22-1~14] 13.8 Compound and power electron devices and process technology

2:45 PM - 3:00 PM

[7p-S22-6] Normally-off MOSFET properties fabricated on Mg implanted GaN layers

〇Shinya Takashima¹, Katsunori Ueno¹, Ryo Tanaka¹, Hideaki Matsuyama¹, Masaharu Edo¹, Kiyokazu Nakagawa² (1.Fuji Electric, 2.Univ. of Yamanashi)

Wed. Sep 6, 2017 4:00 PM - 6:00 PM PA8 (P)

Poster presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[6p-PA8-1~31] 13.8 Compound and power electron devices and process technology

4:00 PM - 6:00 PM

[6p-PA8-21] Activation evaluation of Mg implanted GaN layer by capacitance measurement

〇Shinya Takashima¹, Katsunori Ueno¹, Ryo Tanaka¹, Hideaki Matsuyama¹, Masaharu Edo¹ (1.Fuji Electric)