〇Mutsunori Uenuma¹, Kiyoshi Takahashi², Sho Sonehara¹, Takuya Akano¹, Yuta Fujimoto¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST, 2.Nippon Aluminum Alkyls Ltd.)

4:00 PM - 6:00 PM

△ [6p-PA8-8] Characterization of AlxGa1-xN/GaN MOS-HEMTs

〇(M1)Yuji Ando¹, Syouta Kaneki¹, Kenya Nishiguchi¹, Hashizume Tamotsu¹ (1.Hokkaido Univ.)

4:00 PM - 6:00 PM

△ [6p-PA8-9] Effects of ALD Condition on Electrical Characterization of Al₂O₃/GaN MOS

〇Sho Sonehara¹, Mutsunori Uenuma¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST)

4:00 PM - 6:00 PM

[6p-PA8-10] XRD and HAXPES characterization of Al/Ti/AlGaN interface formed by thermal annealing

〇Satoshi Yasuno¹, Tomoyuki Koganezawa¹, Takayuki Suzuki², Naotaka Iwata² (1.JASRI, 2.Toyota Tech. Inst.)

4:00 PM - 6:00 PM

[6p-PA8-11] Properties of SiO₂/InAlN interface having ultrathin Al₂O₃ interlayer

〇Shouhei Kitajima¹, Masamichi Akazawa¹ (1.RCIQE, Hokkaido Univ)

4:00 PM - 6:00 PM

[6p-PA8-12] Change in properties of GaN Schottky barrier diodes by insertion of ultrathin insulator layers

〇(M2)Taito Hasezaki¹, Masamiti Akazawa¹ (1.RCIQE,Hokkaido Univ.)

4:00 PM - 6:00 PM

[6p-PA8-13] Evaluation of SBD characteristics on lightly-doped p-type GaN layers

〇Hideaki Matsuyama¹, Katsunori Ueno¹, Shinya Takashima¹, Ryou Tanaka¹, Hisashi Yamada², Mitsuaki Shimizu², Masaharu Edo¹ (1.Fuji Electric, 2.AIST)

4:00 PM - 6:00 PM

[6p-PA8-14] Proton irradiation effect on long-term reliability of GaN HEMTs

〇Takayuki Hisaka¹, Hajime Sasaki¹, Tomoki Oku¹, Satoshi Hatori², Ryoya Ishigami², Kyo Kume² (1.Mitsubishi Electric Corp., 2.Wakasa Wan Energy Reserch Center)

4:00 PM - 6:00 PM

[6p-PA8-15] Photoinduced Current in n-AlGaAs/GaAs Heterojunction Field-Effect Transistor Driven by Local Illumination in Edge Regions of Schottky Metal Gate

〇Takuya Kawazu¹, Takeshi Noda¹, Yoshiki Sakuma¹ (1.NIMS)

4:00 PM - 6:00 PM

[6p-PA8-16] SLS buffer layer thickness dependence of electrical properties for a vertical GaN p-n diode on Si substrate

〇Keisuke Nakamura¹, Takeaki Hamada¹, Suguru Mase¹, Takashi Egawa¹ (1.Nagoya inst. tech.)

4:00 PM - 6:00 PM

[6p-PA8-17] Stabilization of Nonvolatile Memory Operation Using the Bistability of GaN/AlN Resonant Tunneling Diodes

〇Masanori Nagase¹, Tokio Takahashi¹, Mitsuaki Shimizu¹ (1.AIST)

4:00 PM - 6:00 PM

[6p-PA8-18] Study of contact resistance reduction on ohmic contacts with dot-shaped uneven AlGaN layers for AlGaN/GaN HEMT structures

〇(M2)Takumi Watanabe¹, Shinnosuke Hisanaga¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai¹, Kazuo Tsutsui¹ (1.Tokyo Tech)

4:00 PM - 6:00 PM

[6p-PA8-19] Characterization of p-ch GaN MOS Structure on Polarization-Junction Substrate

〇(M2)Rumi Takayama¹, Takuya Hoshii¹, Akira Nakajima², Shinichi Nishizawa³, Hiromichi Ohashi¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech, 2.AIST, 3.Kyushu Univ.)

4:00 PM - 6:00 PM

[6p-PA8-20] Characterization of N-polar Mg-doped p-type GaN by photo-current Deep-Level Transient Spectroscopy

〇(M1)Hideaki Suzuki¹, Katsuya Terashima¹, Shungo Oikawa¹, Ryohei Nonoda², Tomoyuki Tanikawa², Takashi Matsuoka², Hiroshi Okamoto¹ (1.Hirosaki Univ., 2.Tohoku Univ.)

4:00 PM - 6:00 PM

[6p-PA8-21] Activation evaluation of Mg implanted GaN layer by capacitance measurement

〇Shinya Takashima¹, Katsunori Ueno¹, Ryo Tanaka¹, Hideaki Matsuyama¹, Masaharu Edo¹ (1.Fuji Electric)

4:00 PM - 6:00 PM

[6p-PA8-22] Evaluation of lateral diffusion of Mg ion implantation into GaN

〇Ryo Tanaka¹, Shinya Takashima¹, Hideaki Matsuyama¹, Katsunori Ueno¹, Masaharu Edo¹ (1.Fuji Electric)

4:00 PM - 6:00 PM

[6p-PA8-23] Mg enhanced diffusion into GaN layer on GaN substrate

〇Toshikazu Yamada¹, Noriyuki Taoka¹, Tokio Takahashi¹, Satoshi Yamada¹, Mitsuaki Shimizu¹ (1.GaN-OIL AIST)

4:00 PM - 6:00 PM

[6p-PA8-24] Characterization of plasma-induced defects in GaN by photocapacitance spectroscopy

Kanto Yamasaki¹, Rikito Orimo¹, 〇Seiji Nakamura¹, Tsugunori Okumura¹ (1.Tokyo Metropolitan Univ.)

4:00 PM - 6:00 PM

[6p-PA8-25] Stabilization of threshold voltage of GaN MISFET by nitrogen radical irradiation

〇Hideki Matsumura¹, Romualdo Ferreyra¹, Asamira Suzuki¹, Daisuke Ueda¹ (1.Kyoto Inst. Tech.)

4:00 PM - 6:00 PM

[6p-PA8-26] Low-damage etching of n-GaN surface utilizing photoelectrochemical reactions

〇Satoru Matsumoto¹, Taketomo Sato¹, Tetsuo Narita^2,3, Tetsu Kachi³, Tamotsu Hashizume^1,3 (1.RCIQE, Hokkaido Univ., 2.Toyota Central R&D Labs.,Inc., 3.IMaSS, Nagoya Univ.)

4:00 PM - 6:00 PM

[6p-PA8-27] Annealing of hydrogen-ion-implanted n-GaN under reverse bias

〇Ken Iyoda¹, Yutaka Tokuda¹, Kenji Shiojima², Joji Ito³, Takahide Yagi³ (1.Aichi Inst.ofTech., 2.Fukui Univ., 3.SHI-ATEX Co,Ltd.)

4:00 PM - 6:00 PM

[6p-PA8-28] Deposition and characterization of silicon dioxide film formed by surface-wave plasma enhanced chemical vapor deposition (2)

〇Makoto Baba¹, Kento Nakamura¹, Okada Hiroshi^2,1, Furukawa Masakazu³, Yamane Keisuke¹, Sekiguchi Hiroto¹, Wakahara Akihiro^1,2 (1.Toyohashi Univ.Tech, 2.EIIRIS, 3.ARLC)

4:00 PM - 6:00 PM

[6p-PA8-29] Effect of Surface Treatment and HPWVA on SiO₂/n-GaN Interface

〇Takuya Akano¹, Mutsunori Uenuma¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST)

4:00 PM - 6:00 PM

[6p-PA8-30] Fabrication of iridium oxide thick films with p-type conductivity and their electrical properties

〇Shu Takemoto¹, Shinichi Kan¹, Kentaro Kaneko^1,2, Toshimi Hitora², Shizuo Fujita¹ (1.Kyoto Univ., 2.FLOSFIA INC.)

4:00 PM - 6:00 PM

[6p-PA8-31] Cryogenic DC and RF Characteristics of InGaAs/InAs/InGaAs Channel HEMTs

〇Akira Endoh¹, Issei Watanabe¹, Akifumi Kasamatsu¹, Takashi Mimura^1,2 (1.NICT, 2.Fujitsu Labs. Ltd.)

Session information

[6p-PA8-1~31] 13.8 Compound and power electron devices and process technology

[6p-PA8-1] Crystal evaluation for AlGaN-channel 2DEG heterostructures
~Relationship between interface roughness and initial growth condition of AlGaN films~

[6p-PA8-2] Field-effect UV phototransistors based-on nearly lattice-matched InAlN/AlGaN heterostructures

[6p-PA8-3] PL lifetime measurement for AlGaN epitaxial films via plasma etching treatment and Al₂O₃-ALD process

[6p-PA8-4] Analyses of Electronic and Atomic Structures of Insulator/GaN Interface by Photoelectron Diffraction and Spectroscopy

[6p-PA8-5] Estimation of chemical characteristics of Al₂O₃ on AlGaN using electron spin resonance

△ [6p-PA8-6] Interface characterization of MOS structures using m-GaN layer

[6p-PA8-7] Characterization of Al₂O₃/GaN MOS formed by ALD with DMAH

△ [6p-PA8-8] Characterization of AlxGa1-xN/GaN MOS-HEMTs

△ [6p-PA8-9] Effects of ALD Condition on Electrical Characterization of Al₂O₃/GaN MOS

[6p-PA8-10] XRD and HAXPES characterization of Al/Ti/AlGaN interface formed by thermal annealing

[6p-PA8-11] Properties of SiO₂/InAlN interface having ultrathin Al₂O₃ interlayer

[6p-PA8-12] Change in properties of GaN Schottky barrier diodes by insertion of ultrathin insulator layers

[6p-PA8-13] Evaluation of SBD characteristics on lightly-doped p-type GaN layers

[6p-PA8-14] Proton irradiation effect on long-term reliability of GaN HEMTs

[6p-PA8-15] Photoinduced Current in n-AlGaAs/GaAs Heterojunction Field-Effect Transistor Driven by Local Illumination in Edge Regions of Schottky Metal Gate

[6p-PA8-16] SLS buffer layer thickness dependence of electrical properties for a vertical GaN p-n diode on Si substrate

[6p-PA8-17] Stabilization of Nonvolatile Memory Operation Using the Bistability of GaN/AlN Resonant Tunneling Diodes

[6p-PA8-18] Study of contact resistance reduction on ohmic contacts with dot-shaped uneven AlGaN layers for AlGaN/GaN HEMT structures

[6p-PA8-19] Characterization of p-ch GaN MOS Structure on Polarization-Junction Substrate

[6p-PA8-20] Characterization of N-polar Mg-doped p-type GaN by photo-current Deep-Level Transient Spectroscopy

[6p-PA8-21] Activation evaluation of Mg implanted GaN layer by capacitance measurement

[6p-PA8-22] Evaluation of lateral diffusion of Mg ion implantation into GaN

[6p-PA8-23] Mg enhanced diffusion into GaN layer on GaN substrate

[6p-PA8-24] Characterization of plasma-induced defects in GaN by photocapacitance spectroscopy

[6p-PA8-25] Stabilization of threshold voltage of GaN MISFET by nitrogen radical irradiation

[6p-PA8-26] Low-damage etching of n-GaN surface utilizing photoelectrochemical reactions

[6p-PA8-27] Annealing of hydrogen-ion-implanted n-GaN under reverse bias

[6p-PA8-28] Deposition and characterization of silicon dioxide film formed by surface-wave plasma enhanced chemical vapor deposition (2)

[6p-PA8-29] Effect of Surface Treatment and HPWVA on SiO₂/n-GaN Interface

[6p-PA8-30] Fabrication of iridium oxide thick films with p-type conductivity and their electrical properties

[6p-PA8-31] Cryogenic DC and RF Characteristics of InGaAs/InAs/InGaAs Channel HEMTs

Authentication

Session information

[6p-PA8-1~31] 13.8 Compound and power electron devices and process technology

△ [6p-PA8-6] Interface characterization of MOS structures using m-GaN layer

△ [6p-PA8-8] Characterization of AlxGa1-xN/GaN MOS-HEMTs

△ [6p-PA8-9] Effects of ALD Condition on Electrical Characterization of Al2O3/GaN MOS

Authentication

△ [6p-PA8-9] Effects of ALD Condition on Electrical Characterization of Al₂O₃/GaN MOS