Akira Endoh

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Speaker, Author, Co-Author

Wed. Sep 6, 2017 4:00 PM - 6:00 PM PA8 (P)

Poster presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[6p-PA8-1~31] 13.8 Compound and power electron devices and process technology

4:00 PM - 6:00 PM

[6p-PA8-31] Cryogenic DC and RF Characteristics of InGaAs/InAs/InGaAs Channel HEMTs

〇Akira Endoh¹, Issei Watanabe¹, Akifumi Kasamatsu¹, Takashi Mimura^1,2 (1.NICT, 2.Fujitsu Labs. Ltd.)