KwangWon Jo

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Speaker, Author, Co-Author

Thu. Sep 7, 2017 9:30 AM - 11:30 AM PB3 (P)

Poster presentation
| 13 Semiconductors
| 13.5 Semiconductor devices and related technologies

[7a-PB3-1~9] 13.5 Semiconductor devices and related technologies

9:30 AM - 11:30 AM

▼ [7a-PB3-2] Effect of SiGe Layer Thickness in Starting Substrate on Electrical Properties of Ultrathin Body Ge-on-Insulator pMOSFET fabricated by Ge condensation

〇(DC)KwangWon Jo¹, WuKang Kim¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.The Univ. of Tokyo, Department of Electrical Engineering and Information Systems)

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