Haruka Fujiwara

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Speaker, Author, Co-Author

Tue. Sep 5, 2017 9:00 AM - 12:00 PM C11 (Office 1)

Oral presentation
| 13 Semiconductors
| 13.3 Insulator technology

[5a-C11-1~11] 13.3 Insulator technology

6.1と13.3と13.5のコードシェアセッションあり

10:00 AM - 10:15 AM

[5a-C11-5] Characteristic change of GeO ₂ / Ge interface by Hf-Post Matallization Annealing

〇Haruka Fujiwara¹, Yoshitaka Iwazaki¹, Tomo Ueno¹, Hiroshi Yamada¹, Namiki Mitaro¹ (1.Tokyo Univ. of Agri. & Tech)