Hiroki Kuroiwa

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Speaker, Author, Co-Author

Tue. Sep 5, 2017 1:15 PM - 6:45 PM A301 (Main Hall)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[5p-A301-1~19] 15.4 III-V-group nitride crystals

3:15 PM - 3:30 PM

[5p-A301-7] Shape control of selective area growth of GaN for applying to three-dimensional channel transistors

〇(M2)Hiroki Kuroiwa¹, Takuya Hamada¹, Tokio Takahashi², Toshihide Ide², Mitsuaki Shimizu², Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai¹, Kazuo Tsutsui¹ (1.Tokyo Tech, 2.AIST)

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