Shinji Yamada

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Speaker, Author, Co-Author

Tue. Sep 5, 2017 1:45 PM - 6:15 PM C17 (Training Room 2)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[5p-C17-1~17] 13.8 Compound and power electron devices and process technology

5:00 PM - 5:15 PM

[5p-C17-13] Characteristics of n-GaN Schottky diodes treated by ultra-low power ICP-RIE

〇Shinji Yamada^1,2, Hideki Sakurai^1,2, Masato Omori¹, Yamato Osada², Ryuichiro Kamimura², Jun Suda^1,3, Tetsu Kachi¹ (1.Nagoya Univ. IMaSS, 2.ULVAC ISET, 3.Nagoya Univ.)

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