Masato Ohmori

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Speaker, Author, Co-Author

Tue. Sep 5, 2017 1:45 PM - 6:15 PM C17 (Training Room 2)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[5p-C17-1~17] 13.8 Compound and power electron devices and process technology

5:30 PM - 5:45 PM

[5p-C17-15] Characteristics of Schottky Barrier Junction and Surface Photovoltage in n-type GaN

〇Masato Ohmori¹, Shinji Yamada^1,2, Hideki Sakurai^1,2, Yamato Osada², Ryuichiro Kamimura², Tetsu Kachi¹ (1.Nagoya Univ. IMaSS, 2.ULVAC ISET)