Tomoyoshi Mishima

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Speaker, Author, Co-Author

Tue. Sep 5, 2017 1:45 PM - 6:15 PM C17 (Training Room 2)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[5p-C17-1~17] 13.8 Compound and power electron devices and process technology

6:00 PM - 6:15 PM

[5p-C17-17] 5 kV breakdown voltage GaN p-n diodes fabricated on free-standing GaN substrates

Hiroshi Ohta¹, Kentaro Hayashi¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Tohru Nakamura¹, 〇Tomoyoshi Mishima¹ (1.Hosei Univ., 2.SCIOCS)

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