Tatsuya Oyobiki

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Speaker, Author, Co-Author

Tue. Sep 5, 2017 1:45 PM - 6:15 PM C17 (Training Room 2)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[5p-C17-1~17] 13.8 Compound and power electron devices and process technology

2:30 PM - 2:45 PM

△ [5p-C17-4] Characterization of ICP-etching induced defects at GaN surfaces using MOS structures

〇Tatsuya Oyobiki¹, Kenya Nishiguchi¹, Shinji Yamada^2,3, Hideki Sakurai^2,3, Ryuichiro Kamimura³, Yamato Osada³, Tetsu Kachi², Tamotsu Hashizume¹ (1.Hokudai Univ., 2.Nagoya Univ., 3.ULVAC)

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