Daiki Terashima

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Speaker, Author, Co-Author

Tue. Sep 5, 2017 1:45 PM - 6:15 PM C17 (Training Room 2)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[5p-C17-1~17] 13.8 Compound and power electron devices and process technology

2:45 PM - 3:00 PM

△ [5p-C17-5] Influence of deposition power and temperature on SiO₂/AlGaN interface property deposited by PECVD

〇Daiki Terashima¹, Kenta Watanabe¹, Takahiro Yamada¹, Mikito Nozaki¹, Hongan Shih², Satoshi Nakazawa², Yoshiharu Anda², Tetsuzo Ueda², Akitaka Yoshigoe³, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Panasonic, 3.JAEA)