Yuto Ando

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Speaker, Author, Co-Author

Tue. Sep 5, 2017 1:45 PM - 6:15 PM C17 (Training Room 2)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[5p-C17-1~17] 13.8 Compound and power electron devices and process technology

3:00 PM - 3:15 PM

△ [5p-C17-6] Silicon doped thick epi-layer GaN SBD on different miscut m-plane substrates

〇Yuto Ando¹, Kentaro Nagamatsu², Atsushi Tanaka^2,3, Shigeyoshi Usami¹, Ousmane 1 Barry^3,1, Manato Deki², Maki Kushimoto¹, Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,4,5 (1.Dept. of Electronics, Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.NIMS, 4.Nagoya Univ. ARC, 5.NU VBL)

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