Atsushi Hiraiwa

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Speaker, Author, Co-Author

Tue. Sep 5, 2017 1:45 PM - 6:15 PM C17 (Training Room 2)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[5p-C17-1~17] 13.8 Compound and power electron devices and process technology

4:00 PM - 4:15 PM

[5p-C17-9] Temperature effect on time-dependent dielectric breakdown of atomic-layer-deposition Al₂O₃ films formed on GaN

〇Atsushi Hiraiwa^1,2, Toshio Sasaki¹, Satoshi Okubo³, Hiroshi Kawarada^1,3,4 (1.Waseda Univ., RONL, 2.Nagoya Univ., IMaSS, 3.Waseda Univ., FSE, 4.Waseda Univ., KMLMST)