Nozomu Iitsuka

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Speaker, Author, Co-Author

Wed. Sep 6, 2017 9:00 AM - 12:15 PM A201 (201)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[6a-A201-1~12] 15.6 Group IV Compound Semiconductors (SiC)

9:00 AM - 9:15 AM

[6a-A201-1] The effect of annealing in O₂ ambient on the Wet oxide films on SiC (000-1)

〇Nozomu Iitsuka¹, Ryu Hasunuma¹ (1.Tsukuba Univ.)