Satoshi Asada

→ Search for Satoshi Asada in Google Scholar

Speaker, Author, Co-Author

Wed. Sep 6, 2017 9:00 AM - 12:15 PM A201 (201)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[6a-A201-1~12] 15.6 Group IV Compound Semiconductors (SiC)

11:00 AM - 11:15 AM

△ [6a-A201-8] Design criterion for SiC BJTs to avoid negative effects of base spreading resistance on on-characteristics

〇Satoshi Asada¹, Jun Suda¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)