Kazunori Kurishima

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Speaker, Author, Co-Author

Wed. Sep 6, 2017 9:00 AM - 11:45 AM A203 (203)

Oral presentation
| 21 Joint Session K
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[6a-A203-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

10:45 AM - 11:00 AM

△ [6a-A203-7] Influence of High-k/ In_1-xSi_xO_1-yC_y channel interface on transistor characteristics

〇(D)Kazunori Kurishima^1,2, Toshihide Nabatame², Takashi Onaya^1,2, Takio Kizu², Kazuhito Tsukagoshi², Akihiko Ohi², Naoki Ikeda², Toyohiro Chikyow², Atsushi Ogura¹ (1.Meiji Univ., 2.NIMS)