Satoshi Nakano

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Speaker, Author, Co-Author

Wed. Sep 6, 2017 9:00 AM - 12:30 PM A503 (503)

Oral presentation
| 15 Crystal Engineering
| 15.7 Crystal evaluation, impurities and crystal defects

[6a-A503-1~13] 15.7 Crystal evaluation, impurities and crystal defects

11:15 AM - 11:30 AM

[6a-A503-9] Dependence of radial temperature difference for dislocation density during silicon crystal growth

〇Satoshi Nakano¹, Xin Liu¹, Xue-Feng Han¹, Koichi Kakimoto¹ (1.RIAM, Kyushu Univ.)