Yu Nagahama

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Speaker, Author, Co-Author

Wed. Sep 6, 2017 9:30 AM - 11:30 AM PA9 (P)

Poster presentation
| 13 Semiconductors
| 13.3 Insulator technology

[6a-PA9-1~11] 13.3 Insulator technology

9:30 AM - 11:30 AM

[6a-PA9-3] Effects of gate-electrode metals on the electrical properties of Al₂O₃/GeO₂/p-Ge MOS capacitor grown by REALD -2

〇(M1)Yu Nagahama¹, Daichi Yamada², Yohei Otani², Yukio Fukuda², Hiroshi Okamoto¹ (1.Hirosaki Univ., 2.Tokyo Univ. of Science)