Toshinori Taishi

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Speaker, Author, Co-Author

Wed. Sep 6, 2017 1:30 PM - 7:00 PM A201 (201)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[6p-A201-1~20] 15.6 Group IV Compound Semiconductors (SiC)

4:30 PM - 4:45 PM

[6p-A201-12] Relationship between seeding conditions and carbon concentration in solution growth of SiC by TSSG method

〇Toshinori Taishi^1,2, Masaru Takahashi², Naomichi Tsuchimoto², Koki Suzuki², Koangyong Hyun² (1.Shinshu Univ.(CEES), 2.Shinshu Univ.(Eng))