SHOHEI HAYASHI

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Speaker, Author, Co-Author

Wed. Sep 6, 2017 1:30 PM - 7:00 PM A201 (201)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[6p-A201-1~20] 15.6 Group IV Compound Semiconductors (SiC)

2:45 PM - 3:00 PM

△ [6p-A201-6] Relationship between Current Density and Stacking Fault Expansion Origin in Forward Degradation of 4H-SiC PiN Diode (II)

〇SHOHEI HAYASHI^1,2, TAMOTSU YAMASHITA^1,3, JUNJI SENZAKI¹, MASAKI MIYAZATO^1,4, MINA RYO^1,4, MASAAKI MIYAJIMA^1,4, TOMOHISA KATO¹, YOSHIYUKI YONEZAWA¹, KAZUTOSHI KOJIMA¹, HAJIME OKUMURA¹ (1.AIST, 2.Toray Research Center, 3.SHOWA DENKO, 4.Fuji Electric)

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